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Institute of Microelectronics, Chinese Academy of Sciences Makes New Progress in Heterogeneous Integration of Gallium Nitride-Diamond

  • Friday, 24 June 2022
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Recently, Liu Xinyu's team of researchers from the High Frequency and High Voltage Center of the Institute of Microelectronics, Chinese Academy of Sciences, has made new progress in the field of gallium nitride (GaN)-diamond wafer bonding technology in cooperation with the team of Junichiro Shiami, University of Tokyo, Japan.

This research innovatively uses the surface activation bonding method (SAB) to produce gallium nitride-diamond bonding at room temperature using nano-amorphous silicon as a medium. The system reveals the interface behavior of the bonding structure during annealing and its influence on thermal conductivity and the mechanism of thermal stress discovered the phenomenon of recrystallization of the nano-amorphous silicon layer during annealing to reduce the interfacial thermal resistance, showing the obvious advantages of this bonding technology in thermal conductivity, thermal stress control and reliability. (Source: Third Generation Semiconductor Industry Watch)

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